| Installation type | Surface mount | 
| packing | TR,CT | 
| series | HEXFET® | 
| Part status | stop production | 
| working temperature | -40°C ~ 150°C(TJ) | 
| Encapsulation/Housing | DirectFET™ isovolume MC | 
| Warehouse | China/Hong Kong | 
| quality | Original genuine | 
| Power - maximum | 2.1W | 
| FET Type | 2 P Channel(two) | 
| Drain source voltage (Vdss) | 30V | 
| Current at 25 ° C - continuous drain (Id) | 14A | 
| On resistance (maximum) for different Ids and Vgs | 7 mΩ @ 14A,10V | 
| Vgs (th) (maximum) for different Ids | 2.4V @ 50µA | 
| Gate charge (Qg) at different Vgs (maximum) | 64nC @ 10V | 
| Input capacitance at different Vds (Ciss) (maximum) | 3241pF @ 15V | 
| FET function | Logic level gate |